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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

Walton Electronics Co., Ltd.

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

Brand Name : original

Model Number : MRF9045LR1

Certification : ISO9001:2015standard

Place of Origin : original

MOQ : 10pcs

Price : 9.43-9.88SD/PCS

Payment Terms : L/C, Western Union,palpay

Supply Ability : 1000pcs/months

Delivery Time : 2-3 workdays

Packaging Details : standard

product name : MRF9045LR1

Product Category : RF Bipolar Transistors

Technology : Si

Product Type : RF Bipolar Transistors

Gain : 18.8dB

Mounting Style : SMD/SMT

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MRF9045LR1Transistors RF Bipolar Transistors Si original in stock

The ASI MRF9045LR1 is a high voltage, gold-metalized,

laterally diffused metal oxide semiconductor. Ideal for today's

RF power amplifier Applications.

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

RF MOSFET Transistors
RoHS: Details
N-Channel
Si
4.25 A
65 V
945 MHz
18.8 dB
60 W
SMD/SMT
NI-360
Tray
Configuration: Single
Forward Transconductance - Min: 3 S
Pd - Power Dissipation: 117 W
Product Type: RF MOSFET Transistors
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Unit Weight: 0.032480 oz
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applica-
tions in 28 volt base station equipment.
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No

Product Tags:

MRF9045LR1 RF Bipolar Transistors

      

RF Bipolar Transistors 18.8dB

      

ASI MRF9045LR1

      
Quality ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB for sale

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB Images

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